1 - 2 ? 2000 ixys all rights reserved hiperfast tm igbt advance technical information v ces = 1200 v i c2 = 70 a v ce(sat) = 3.3 v t fi(typ) = 160 ns ixgh 35n120b ixgt 35n120b c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixgh) features ? international standard packages jedec to-268 and jedec to-247 ad low switching losses, low v (sat) mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies advantages high power density suitable for surface mounting easy to mount with 1 screw, (isolated mounting screw hole) 98665 (11/99) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 1 ma, v ge = 0 v 1200 v v ge(th) i c = 750 a, v ce = v ge 2.5 5 v i ces v ce = v ces t j = 25 c 250 a v ge = 0 v t j = 125 c5ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 3.3 v t j = 125 c 2.7 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 1 m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c70a i c90 t c = 90 c35a i cm t c = 25 c, 1 ms 140 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 i cm = 90 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s maximum tab temperature for soldering smd devices for 10 s 260 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (ixgt) g e c (tab) ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 30 40 s pulse test, t 300 s, duty cycle 2 % c ies 4620 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 260 pf c res 90 pf q g 170 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 57 nc t d(on) 50 ns t ri 27 ns t d(off) 180 280 ns t fi 160 320 ns e off 3.8 7.3 mj t d(on) 55 ns t ri 31 ns e on 2.6 mj t d(off) 300 ns t fi 360 ns e off 8.0 mj r thjc 0.42 k/w r thck (to-247) 0.25 k/w (to-268) 0.3 k/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 5 inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 5 ixgh 35n120b ixgt 35n120b to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 min. recommended footprint ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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